Nanowire spintronics for storage class memories and logic.

Heterojunction Metal-Oxide-Metal Au-Fe3O4-Au Single Nanowire Device for Spintronics

Current-controlled magnetic domain-wall nanowire shift register.

The controlled motion of a series of domain walls along magnetic nanowires using spin-polarized current pulses is the essential ingredient of the proposed magnetic racetrack memory, a new class of potential non-volatile storage-class memories. Using permalloy nanowires, we achieved the successive creation, motion, and detection of domain walls by using sequences of properly timed, nanosecond-lo...

8 Spintronics — Spin - Based Electronics

Spintronics is an acronym for a spin transport electronics and was originally used as a name for the Defense Advanced Research Projects Agency (DARPA) program. In 1994, DARPA started to develop magnetic field sensors and memory based on the giant magnetoresistance (GMR) effect and spindependent tunneling. The overall goal for the Spintronics program was to create a new generation of electronic ...

Detection ofStorage Errors in Mass Memories

Arithmetic error codes constitute a class oferror codes that are preserved during most arithmetic operations. Effectiveness studies for arithmetic error codes have shown their value for concurrent detection of faults in arithmetic processors, data transmission subsystems, and main storage units in fault-tolerant computers In this paper, it is shown that the same class of codes is also quite eff...

Ideal and Resistive Nanowire Decoders General models for nanowire addressing

Recent research in nanoscale computing offers multiple techniques for producing large numbers of parallel nanowires (NWs). These wires can be assembled into crossbars, two orthogonal sets of parallel NWs separated by a layer of molecular devices. In a crossbar, pairs of orthogonal NWs provides control over the molecules at their crosspoints. Hysteretic molecules act as programmable diodes, allo...